We have developed an integrated, 10 GHz active gate driver for GaN FETs. It is the first chip to output an arbitrary waveform during the short time in which a GaN FET switches. The chip does this by ...
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A number of temperature indicators (aka temperature-sensitive electrical parameters TSEPs) have been demonstrated in the literature. For example, when the GaN FET is turned on, the current would ...
The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging. This ...
It’s powered by a “Marantz Rise” GaN FET amplifier with 310 watts (745 watts peak) and there are six “Marantz Gravity” drivers in total: two 1-inch tweeters, three 2-inch full-range ...